JUAN ANTONIO JIMENEZ TEJADA

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1 Ficha de investigador JUAN ANTONIO JIMENEZ TEJADA Grupo de Investigación: GRUPO DE INVESTIGACION EN DISPOSITIVOS ELECTRONICOS (Cod.: TIC105) Departamento: Universidad de Granada. Electrónica y Tecnología de Computadores Código ORCID: Digibug: RG: Correo electronico: tejada@ugr.es Código: Ficha del Directorio Producción 74 Artículos (58) Libros (9) Capítulos de Libros (1) dirigidas (6) Evolución producción 8 6 Capítu Libros Artículos 1990 Proyectos dirigidos Proyectos (2) Contratos (0) Convenios (0) Año Proyectos en curso por año Conve Contr Proye Año Actividades 0

2 Titulo publicación Fuente Tipo Fecha Organic thin film using a liquid crystalline palladium phthalocyanine as active layer Boundary condition model for the simulation of organic solar cells Compact modeling of organic thin-film with solution processed octadecyl substituted tetrabenzotriazaporphyrin as an active layer Compact modeling of physical mechanisms in organic solar cells Effects of ion distributions on charge collection in perovskite solar cells Charge density at the contacts of symmetric and asymmetric organic diodes Charge transfer processes at the semiconductor/electrolyte interface for solar fuel production: insight from impedance spectroscopy Dynamic phenomena at perovskite/electron-selective contact interface as interpreted from photovoltage decays Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion Compact modelling and contact effects in thin film Electrical characterization of controlled and unintentional modified metal-organic contacts Space-charge and injection limited current in organic diodes: a unified model Characterization of organic thin film with hysteresis and contact effects Low-frequency noise studies on fully depleted utbox siliconon-insulator nmosfets: challenges and opportunities Modelado de fenómenos de histéresis y contactos en transistores orgánicos/poliméricos. Dependence of generation-recombination noise with gate voltage in fd soi mosfets Effects of gate oxide and junction nonuniformity on the dc and low-frequency noise performance of four-gate Modeling the transition from ohmic to space charge limited current in organic semiconductors Simulation tools for micro- and nano- modeling Contact effects in compact models of organic thin film : application to zinc phthalocyanine-based High doping density/high electric field, stress and heterojunction effects on the characteristics of cmos compatible p-n junctions Impact of the fringing capacitance at the back of thin-film Impact of ge content and recess depth on the leakage current in strained si(1-x)ge(x)/si heterojunctions Miniband structure and photon absorption in regimented quantum dot systems Journal of applied physics Articulo 2018 Organic electronics Articulo 2017 Articulo Acs energy letters Articulo 2017 Organic electronics Articulo 2016 Journal of materials chemistry a Articulo 2016 Articulo 2016 Physics reports Articulo 2016 Articulo 2014 Organic electronics Articulo 2014 Organic electronics Articulo 2014 Organic electronics Articulo 2013 Articulo Articulo 2012 Articulo 2012 Organic electronics Articulo Organic electronics Articulo 2011 Journal of the electrochemical society Articulo 2011 Organic electronics Articulo 2011 Articulo 2011 Journal of applied physics Articulo 2011

3 quantum dot systems Localization and quantification of noise sources in four-gate field-effect- Evaluation of the charge density in the contact region of organic thin film Model for the injection of charge through the contacts of organic Modelado de mecanismos físicos y las estructuras constituyentes de un transistor de efecto campo orgánico. A low-frequency noise model for four-gate field-effect Fundamentos de teoría de circuitos para electrónica Nuevas tecnologías en los dispositivos electrónicos Problemas de electrónica básica Unified model for the injection and transport of charge in organic diodes Theory of microplasma fluctuations and noise in silicon diode in avalanche breakdown A study of envelope functions in fd-soi for nonparabolic bands Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy A simple model for analysing the effects of band nonparabolicity in nanostructures A solution of the effective-mass schro?dinger equation in general isotropic and nonparabolic bands for the study of two-dimensional carrier gases Effects of oxygen related defects on the electrical and thermal behavior of a n(+)-p junction Generation-recombination noise in highly asymmetrical p-n junctions Temperature dependence of generation-recombination noise in p-n junctions A simple subthreshold swing model for short channel mosfets Contribution of injection in current noise due to generation and recombination of carriers in p-n junctions Optimum design in a jfet for minimum generationrecombination noise Optimum design in a jfet for minimum generationrecombination noise Estudio del ruido de baja frecuencia en transistores de efecto campo Estudio del ruido de baja frecuencia en transistores de efecto campo International journal of numerical modelling: electronic networks, and fields Articulo 2010 Journal of applied physics Articulo 2009 Journal of applied physics Articulo 2009 Universidad de granada. electrónica y tecnología de computadoras 2009 Articulo 2008 Libros 2008 Libros 2008 Libros 2008 Journal of applied physics Articulo 2008 Journal of applied physics Articulo 2007 Journal of computational electronics Articulo 2006 Applied physics letters Articulo 2006 Semiconductor science and technology Articulo 2005 Journal of applied physics Articulo 2005 Journal of applied physics Articulo 2004 Journal of applied physics Articulo 2002 Journal de physique iv Articulo 2002 Solid-state electronics Articulo 2001 Journal of applied physics Articulo 2001 Microelectronics and reliability Articulo 2000 Microelectronics and reliability Articulo 2000 Universidad de granada. electrónica y tecnología de computadoras 1998 Libros 1997 Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect Journal of applied physics Articulo 1997

4 Influence of the doping profile and deep level trap characteristics on generation-recombination noise Quantum 2-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect Anomalous behaviour of the electric field in highlycompensated non-uniform semiconductors at low temperatures Capture process by shallow donors in silicon at low temperatures A model for the quantized accumulation layer in metalinsulator-semiconductor structures Analisis experimental y modelizacion por el metodo de monte carlo de la captura termica de electrones por imperfecciones en semiconductores Comprehensive monte-carlo simulation of the nonradiative carrier capture process by impurities in semiconductors Estudio de la captura térmica por defectos en si y gaas Influence of the position of deep levels on generationrecombination noise Monte-carlo simulation of multiphonon capture mechanism by deep neutral impurities in si in the presence of an electricfield Monte-carlo study of the statistics of electron-capture by shallow donors in silicon at low-temperatures A comprehensive model for coulomb scattering in inversionlayers Estudio eléctrico comparativo entre uniones p+-n abruptas y graduales con centros profundos Accurate determination of majority thermal-capture crosssections of deep impurities in p-n-junctions Accurate determination of silicon inversion layer mobility by the monte carlo method A high-frequency bidirectional capacitance method to study the evolution of the interface state density generated at low temperatures A non destructive method to determine impurity profiles in non-abrupt p-n junctions with deep levels Comportamiento eléctrico de uniones p+-n no abruptas con centros profundos Efecto de la densidad de carga superficial sobre la movilidad efectiva en mosfet Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers Importance of the choice of the profile model for a p-n junction in the location of the deep levels Analysis of the effects of constant current fowler-nordheim tunneling injection with charge-trapping inside the potential barrier Degradación del sistema si-sio2 producida por inyección Journal of applied physics Articulo 1997 Physical review. b, condensed matter Articulo 1997 Applied physics letters Articulo 1997 Journal de physique iv Articulo 1996 Journal de physique iv Articulo 1996 Solid-state electronics Articulo 1995 Universidad de granada. electrónica y tecnología de computadoras 1995 Journal of applied physics Articulo 1995 Libros 1995 Applied physics letters Articulo 1995 Journal of applied physics Articulo 1995 Physical review. b, condensed matter Articulo 1995 Journal of applied physics Articulo 1994 Homenaje a vicente aleixandre Capítulo de libro 1994 Journal of applied physics Articulo 1993 Simulation of semiconductor and processes Articulo 1993 Solid-state electronics Articulo 1992 Solid-state electronics Articulo 1992 Libros 1992 Libros 1992 Journal of applied physics Articulo 1992 Journal of electronic materials Articulo 1992 Journal of applied physics Articulo 1991

5 Degradación del sistema si-sio2 producida por inyección fowler-nordheim Analisys of a reverse-biased linear graded junction with high concentration of deep impurities Influencia de los niveles creados por el platino en una unión gradual lineal Libros 1991 Solid-state electronics Articulo 1990 Libros 1990

6 1 2 Titulo proyecto Tipo Inicio Fin Simulaciones de dispositivo de capas de perovskitas de alto rendimiento fotovoltaico Desarrollo de un simulador de transitores pmos. estudio del transporte de huecos y el ruido de baja frecuencia Proyecto 12/30/16 12/29/19 Proyecto 12/13/04 Actividades 0 Titulo actividad Fuente Tipo Fecha Colaboradores JUAN ANTONIO LOPEZ VILLANUEVA (34) JUAN ENRIQUE CARCELLER BELTRAN (28) ALBERTO JOSE PALMA LOPEZ (23) ANDRES GODOY MEDINA (21) PILAR LÓPEZ VARO (13) SALVADOR RODRIGUEZ BOLIVAR (11) FRANCISCO J GAMIZ PEREZ (8) FRANCISCO MANUEL GOMEZ CAMPOS (8) IGNACIO MELCHOR FERRER (5) JESUS BANQUERI OZAEZ (5) ANDRÉS MARÍA ROLDÁN ARANDA (1) CARLOS SAMPEDRO MATARÍN (1) FRANCISCO JIMENEZ MOLINOS (1) JUAN B. ROLDAN ARANDA (1) PEDRO CARTUJO CASSINELLO (1)