Práctica 3. LABORATORIO

Transcripción

1 Práctica 3. LABORATORIO Electrónica de Potencia Inversor de 50Hz controlado por ancho de pulso con modulación senoidal SPWM 1. Diagrama de Bloques El inversor que va a montar tiene el siguiente diagrama de bloques: ver apuntes de clase 2. Oscilador Para el oscilador usaremos uno de los operacionales que tiene el integrado MC 1458N. El oscilador es un amplificador realimentado positivamente para provocar la inestabilidad y, por lo tanto, la oscilación. Figura 1: Circuito oscilador senoidal. Determinar R y C para que oscile a 50Hz En la figura 1 se indica el montaje que debe realizar. La condición para que oscile es que: R 2 2R 1 La frecuencia de la oscilación se determina con la realimentación positiva, y su valor es: f m = 1 2πRC 1

2 Calcule los valores nominales de R 3 = R 4 y de C 1 = C 2 para que la frecuencia de oscilación esté lo más cercana posible a 50Hz. Mida los valores reales de los componentes elegidos: R = C = f m = Monte el circuito; alimente el operacional con ±5V. Visualice la señal que obtiene en la salida del operacional y dibújela en la Figura 2, indicando los valores de pico y el periodo. Figura 2: Señales del oscilador 3. Inversor Para obtener la señal seno2 usaremos el segundo operacional del integrado MC 1458N en configuración de amplificador inversor con ganancia unitaria, tal y como se indica en la Figura 3 Visualice la señal seno2 en el osciloscopio. Dibújela en la misma Figura que seno1. 4. Comparador El comparador se implementa con dos de los cuatro operacionales que contiene el integrado LM348. Monte el circuito de la Figura 4. Programe el generador de señales para que proporcione una onda triangular alterna de 1kHz y aproximadamente 0,8V de amplitud. Visualice en el canal uno del osciloscopio seno1 y en el canal dos la señal triangular del generador, tri. Compruebe que la amplitud de la triangular es ligeramente superior que la amplitud de la senoidal. Si no es así, aumente la amplitud de la triangular hasta que sea ligeramente 2

3 Figura 3: Inversor para obtener seno2 Figura 4: Comparador superior. Una vez verificado el nivel de la triangular, visualice en el osciloscopio las señales S1 y S2. Dibújelas en la Figura 6 5. Restador El restador se implementa con uno de los operacionales que queda libre en el integrado LM348. El esquema es el de la Figura 5. A la salida del restador se obtiene la señal P W M = S 2 S 1. Visualice dicha señal en el osciloscópio y dibújela en la Figura 6, debajo de S1 y S2. Conteste a las siguientes preguntas: Frecuencia de S 1 = Frecuencia de S 2 = Frecuencia de P W M = 6. Acoplamiento y etapa de potencia Usando dos optoaclopadores implemente un amplificador en clase D tal y como se muestra en la Figura 7. NO CONECTE LAS TENSIONES DE ALI- 3

4 Figura 5: Restador: S 2 S 1 = P W M MENTACIÓN +15 NI -15 HASTA CONSULTAR CON EL PROFESOR! Verifique el orden de los pines de los optoacopladores. Estos dispositivos tienen la posibilidad de utilizarse como transistores BJT utilizando el pin correspondiente a la base. Sin embargo, cuando se utilizan como optoacopladores, dicho pin debe dejarse al aire (sin conectar), ya que la corritente de base la suministra el fotodiodo interno. 4

5 Figura 6: Señales S1, S2 y PWM Figura 7: Acoplamiento de la señal de control con aislamiento galvánico y amplificación. 5

6 MC1458 MC1558 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION LARGE INPUT VOLTAGE RANGE NO LATCH-UP HIGH GAIN SHORT-CIRCUIT PROTECTION NO FREQUENCY COMPENSATION REQUIRED N DIP8 (Plastic Package) DESCRIPTION The MC1458 is high performance monolithic dual operational amplifier intended for a wide range of analog applications: Summing amplifier Voltage follower Integrator Active filter Function generator The high gain and wide range of operating voltages provide superior performance in integrator, summing amplifiers and general feedback applicatons. D SO8 (Plastic Micropackage) PIN CONNECTIONS (top view) ORDER CODE Part Number Temperature Range N Package MC C, +70 C MC1458I -40 C, +105 C MC C, +125 C Example : MC1458N D Output Inverting input 1 Non-inverting input V - 4 CC + 5 V + CC Output 2 Inverting input 2 Non-inverting input 2 N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) December /6

7 MC1458-MC1558 SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter MC1458 MC1458I MC1558 Unit V CC Supply voltage ±22 V V i Input Voltage ±15 V V id Differential Input Voltage ±30 V Output Short-circuit Duration Infinite P tot Power Dissipation D Suffix N Suffix T oper Operating Free-air Temperature Range 0 to to to +125 C T stg Storage Temperature Range -65 to +150 C mw 2/6

8 MC1458-MC1558 ELECTRICAL CHARACTERISTICS V CC = ±15V, (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit V io I io Input Offset Voltage (R s 10kΩ) 1 5 T min T amb T max 6 Input Offset Current T min T amb T max 300 mv na I ib A vd SVR I cc V icm CMR I os ±V opp Input Bias Current T min T amb T max 800 Large Signal Voltage Gain (V o = ±10V, R L = 2kΩ) 50 T min T amb T max 25 Supply Voltage Rejection Ratio (R s 10kΩ) 77 T min T amb T max 77 na 200 V/mV 90 db Supply Current, all Amp, no load T min T amb T max 6 Input Common Mode Voltage Range T min T amb T max ±12 ±12 Common Mode Rejection Ratio (R s 10kΩ) 70 T min T amb T max 70 ma 90 db Output Short-circuit Current Output Voltage Swing T min T amb T max R L 10kΩ R L 2kΩ R L 10kΩ R L 2kΩ ma V SR Slew Rate (V I = ±10V, R L = 2kΩ, C L = 100pF, unity Gain) V/µs t r Rsie Time (V I = ±20mV, R L = 2kΩ, C L = 100pF, unity Gain) 0.3 µs K OV Overshoot (V I = 20mV, R L = 2kΩ, C L = 100pF, unity Gain) 5 % R I Input Resistance MΩ Z ic Common-mode Input Impedance 200 MΩ C I Input Capacitance 1.4 pf R O Output Resistance 75 Ω FPB Full Power Bandwidth (R L = 2kΩ, V O ±10V, A VD = 1, THD 5% 14 KHz 3/6

9 MC1458-MC1558 Symbol Parameter Min. Typ. Max. Unit B GBP THD Unity Gain Bandwidth (V I = 10 mv, R L = 2kΩ, C L = 100pF) Gain Bandwith Product (V I = 10 mv, R L = 2kΩ, C L = 100pF f =100kHz) Total Harmonic Distortion (f = 1kHz, A v = 20dB, R L = 2kΩ C L = 100pF, V o = 2V pp ) MHZ MHz % e n Equivalent Input Noise Voltage (f = 1kHz, R s = 100Ω) 45 nv Hz φm Phase Margin 65 Degrees Am Gain Margin 11 db V o1 /V o2 Channel Separation 120 db 4/6

10 LM348/LM248 Quad Operational Amplifier Features LM741 OP Amp operating characteristics Low supply current drain Class AB output stage no crossover distortion Pin compatible with the LM324/LM248 Low input offset voltage : 1mV Typ. Low input offset current : 4nA Typ. Low input bias current : 30nA Typ. Gain bandwidth (unity gain): 1.0MHz Typ. High degree of isolation between amplifiers: 120dB Overload protection for inputs and outputs Description TheLM348/LM248 is a true quad LM741. It consists of four independent, high-gain, internally compensated, low power operational amplifiers which have been designed to provide functional characteristics identical to those of the familiar LM741 operational amplifier. In addition the total supply current for all four amplifiers is comparable to the supply current of a single LM741 type OP Amp. Other features include input offset currents and input bias current which are much less than those of a standard LM741. Also, excellent isolation between amplifiers has been achieved by independently biasing each amplifier and using layout techniques which minimize thermal coupling. 14-DIP 14-SOP 1 1 Internal Block Diagram Rev Fairchild Semiconductor Corporation

11 LM348/LM248 Schematic Diagram (One Section Only) Absolute Maximum Ratings Parameter Symbol Value Unit Supply Voltage VCC ±18 V Differential Input Voltage VI(DIFF) 36 V Input Voltage VI ±18 V Output Short Circuit Duration - Continuous - Operating Temperature LM348 LM248 TOPR 0 ~ ~ +85 Storage Temperature TSTG - 65~ +150 C C 2

12 LM348/LM248 Electrical Characteristics (VCC =15V, VEE= -15V, TA=25 C, unless otherwise specified) Parameter Symbol Conditions LM248 LM348 Min. Typ. Max. Min. Typ. Max. Unit Input Offset Voltage VIO RS 10KΩ Note mv Input Offset Current IIO Note na Input Bias Current IBIAS Note na Input Resistance RI MΩ Supply Current (all Amplifiers) ICC ma Large Signal Voltage Gain GV RL 2KΩ Note V/mV Channel Separation CS f = 1KHz to 20KHz db Common Mode Input Voltage Range VI(R) Note 1 ± ± V Small Signal Bandwidth BW GV = MHz Phase Margin (Note2) MPH GV = Degree Slew Rate (Note2) SR GV = V/µs Output Short Circuit Current ISC ma Output Voltage Swing VO(P-P) RL 10KΩ Note 1 ±12 ±13 - ±12 ±13 - RL 2KΩ ±10 ±12 - ±10 ±12 - V Common Mode Rejection Ratio CMRR RS 10KΩ Note db Power Supply Rejection Ratio PSRR RS 10KΩ Note db Note : 1. LM348: 0 TA +70 C, LM248: -25 TA +85 C 2. Guaranteed by design. 3

13 SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Current Transfer Ratio 100% Specified Conditions Guaranteed Switching Speeds Meets or Exceeds all JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix V must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Regulation Feedback Circuits Monitor & Detection Circuits Solid State Relays MAXIMUM RATINGS (TA = 25 C unless otherwise noted) INPUT LED GlobalOptoisolator Rating Symbol Value Unit Reverse Voltage VR 6 Volts Forward Current Continuous IF 60 ma LED Power TA = 25 C with Negligible Power in Output Detector Derate above 25 C OUTPUT TRANSISTOR PD mw mw/ C Collector Emitter Voltage VCEO 30 Volts Emitter Base Voltage VEBO 7 Volts Collector Base Voltage VCBO 70 Volts Collector Current Continuous IC 150 ma Detector Power TA = 25 C with Negligible Power in Input LED Derate above 25 C PD mw mw/ C [CTR = 100% Min] *Motorola Preferred Device STANDARD THRU HOLE CASE 730A STYLE 1 PLASTIC 6 1 SCHEMATIC PIN 1. LED ANODE 2. LED CATHODE 3. N.C. 4. EMITTER 5. COLLECTOR 6. BASE TOTAL DEVICE Isolation Source Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VISO 7500 Vac(pk) Total Device Power TA = 25 C Derate above 25 C PD mw mw/ C Ambient Operating Temperature Range(2) TA 55 to +100 C Storage Temperature Range(2) Tstg 55 to +150 C Soldering Temperature (10 sec, 1/16 from case) TL 260 C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 2 Motorola, Inc. Optoelectronics 1995 Device Data 1

14 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)(1) INPUT LED Characteristic Symbol Min Typ(1) Max Unit Forward Voltage (IF = 10 ma) TA = 25 C TA = 55 C TA = 100 C VF Reverse Leakage Current (VR = 6 V) IR 10 µa Capacitance (V = 0 V, f = 1 MHz) CJ 18 pf OUTPUT TRANSISTOR Collector Emitter Dark Current (VCE = 10 V, TA = 25 C) Collector Emitter Dark Current (VCE = 30 V, TA = 100 C) Collector Base Dark Current (VCB = 10 V) TA = 25 C TA = 100 C ICEO ICBO Collector Emitter Breakdown Voltage (IC = 1 ma) V(BR)CEO V Collector Base Breakdown Voltage (IC = 100 µa) V(BR)CBO V Emitter Base Breakdown Voltage (IE = 100 µa) V(BR)EBO V DC Current Gain (IC = 2 ma, VCE = 5 V) hfe 400 Collector Emitter Capacitance (f = 1 MHz, VCE = 0) CCE 7 pf Collector Base Capacitance (f = 1 MHz, VCB = 0) CCB 19 pf Emitter Base Capacitance (f = 1 MHz, VEB = 0) CEB 9 pf COUPLED Output Collector Current TA = 25 C (IF = 10 ma, VCE = 10 V) TA = 55 C TA = 100 C IC (CTR)(2) 10 (100) 4 (40) 4 (40) 30 (300) Collector Emitter Saturation Voltage (IC = 0.5 ma, IF = 10 ma) VCE(sat) V Turn On Time Turn Off Time (IC = 2 ma, VCC = 10 V, Rise Time RL = 100 Ω)(3) V na µa na ma (%) ton µs toff tr 3.2 Fall Time tf 4.7 Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 Vac(pk) Isolation Current(4) (VI O = 3550 Vpk) Isolation Current (VI O = 2500 Vpk) Isolation Current (VI O = 1500 Vpk) 4N35 4N36 4N37 IISO Isolation Resistance (V = 500 V)(4) RISO 1011 Ω Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO pf 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF x 100%. 3. For test circuit setup and waveforms, refer to Figure For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common µa 2 Motorola Optoelectronics Device Data

15 GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Specifications VDE 0884 approval available as a test option -add option.300. (e.g., 4N29.300) SCHEMATIC APPLICATIONS Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless otherwise specified.) Parameter Symbol Value Units TOTAL DEVICE Storage Temperature T STG -55 to +150 C Operating Temperature T OPR -55 to +100 C Lead Solder Temperature T SOL 260 for 10 sec C Total Device Power T A = 25 C 250 mw P Derate above 25 C D 3.3 mw/ C EMITTER Continuous Forward Current I F 80 ma Reverse Voltage V R 3 V Forward Current - Peak (300 µs, 2% Duty Cycle) I F (pk) 3.0 A LED Power T A = 25 C 150 mw P Derate above 25 C D 2.0 mw/ C DETECTOR Collector-Emitter Breakdown Voltage BV CEO 30 V Collector-Base Breakdown Voltage BV CBO 30 V Emitter-Collector Breakdown Voltage BV ECO 5 V Detector Power T A = 25 C 150 mw P Derate above 25 C D 2.0 mw/ C Continuous Collector Current I C 150 ma 4/25/ B

16 GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS 4N29 4N30 4N31 4N32 4N33 ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ Max Unit EMITTER *Input Forward Voltage (I F = 10 ma) V F V *Reverse Leakage Current (V R = 3.0 V) I R µa *Capacitance (V F = 0 V, f = 1.0 MHz) C 150 pf DETECTOR (I C = 100 µa, I B = 0) BV CEO *Collector-Emitter Breakdown Voltage V *Collector-Base Breakdown Voltage (I C = 100 µa, I E = 0) BV CBO V *Emitter-Collector Breakdown Voltage (I E = 100 µa, I B = 0) BV ECO V *Collector-Emitter Dark Current (V CE = 10 V, Base Open) I CEO na DC Current Gain (V CE = 5.0 V, I C = 500 µa) h FE 5000 TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Min Typ Max Units *Collector Output Current (1,2) (4N32, 4N33) 50 (500) (4N29, 4N30) (I F = 10 ma, V CE = 10 V, I B = 0) I C (CTR) 10 (100) ma (%) (4N31) 5 (50) *Saturation Voltage (2) (4N29, 4N30, 4N32, 4N33) 1.0 (IF = 8.0 ma, I C = 2.0 ma) V (4N31) CE(sat) 1.2 V TRANSFER CHARACTERISTICS AC Characteristic Test Conditions Symbol Min Typ Max Units Turn-on Time (3) t on 5.0 (I F = 200 ma, I C = 50 ma, V CC = 10 V) Turn-off Time (3) (4N32, 4N33) 100 µs (Fig.7) t (4N29, 4N30, 4N31) off 40 Bandwidth (4,5) BW 30 KHz ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ Max Units Input-Output Isolation Voltage (6) (I I-O 1 µa, Vrms, t = 1 min.) 5300 Vac(rms) (4N29, 4N30, 4N31, 4N32, 4N33) V ISO *(4N32) VDC 2500 V *(4N33) VDC 1500 Isolation Resistance (6) (V I-O = 500 VDC) R ISO Isolation Capacitance (6) (V I-O =, f = 1 MHz) C ISO 0.8 pf 4/25/ B